Analysis of SOI-Tunnel FET With Alxga1-Xas As Channel Material

Abstract

This paper investigated Al_xGa_1-xAs as the channel material in  Tunnel Field Effect Transistor (TFETs). Synopsys TCAD simulation has been used to analyses DC as well as AC analysis of the proposed device. The mole fraction x = 0.2 is used to study the Al_xGa_1-xAs as channel material. The direct energy band gap for Al_0.2Ga_0.8As is used because x < 0.4.  It is observed that the proposed device shows high on/off ratio   and the subthreshod swing of .