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Abstract
A new n-channel MOSFET with In0.53Ga0.47As as an emerging material by incorporating trench is presented. The proposed structure consists of 1 µm device width, and the gate length (L) is 40 nm with 6 nm oxide (Al2O3)thickness. The gate (TaN) is located in an oxide-trench built in epi-layer so the formation of channels in p-base. Gate (G) and Drain (D) contacts are placed at either side of the structure while source contact is located at the middle of the architecture. With the help of 2-D simulator the performance and characteristics are analysed, and compare the results of the proposed trench- MOS (T-MOS) with that of the planer MOS (P-MOS). The proposed T-MOS provides 1.35 times higher output current, 26% enhancement in gain (gm), and 57% higher cut-off frequency (fT) in comparison with the planer MOSFET.