Comparative Analysis of FinFETs Device on Technology Scale of 14nm vs 20nm

Abstract

In comparison to MOSFET much superior in terms of Electrostatic properties and manufacturability. In today scenario FinFETs are acknowledged as the most promising technology for developing the low power based VLSI Circuit. Most challenging aspect in the MOSFET designing to scale down the device to below 20nm but this challenge can easily overdrive by using the FinFET for minimizing the leakage current to enhance the performance of the VLSI circuits. In this paper, proposed a two design of FinFETs at scale of 20nm & 14nm in terms of channel length and comparative analysis done on the performance basis. In 14nm FinFETs 81% improvement observed as compared to 20nm and 81.6% improvement observed in terms of power parameter and I_on /I_off current ratio of the 14nm FinFET is 10¹⁰ in compared to the 20nm FinFET. Switching speed of the 14nm FinFET high in comparison to 20nm.