Main Article Content
Abstract
This paper investigated the comparative study of L-shaped Tunnel Field Effect Transistors (TFETs) and U-shaped TFETs. The effect of temperature has been studied for both device characteristics in terms of surface potential, electric field, and transfer characteristics.The ON current, as well as OFF current of L-shaped and U-shaped TFETs structure, shows the enhanced performance due to large area of channel length. The addition of n-type pocket under the source enhances the ON current and OFF current of both the devices. L-shaped and U-shaped TFETs structure, both, are easy to fabricate and cost-effective due to the use of already established Si technology. In next-generation devices, the superior performance of L-shaped and U-shaped TFETs structure makes them a promising contender for low power applications. All the simulation has been d done using Atlas Silvaco TCAD software.