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Abstract
Nanowire FET devices are one of the alternative semiconductor devices which have potential to replace the existing MOSFET technology in future. In this paper a comparative study of Si nanowire FET and Tunnel nanowire FET with respect to electronic properties is reported.In devices metallic contacts are considered as source and drain as well as Si nanowire is considered as a channel between source and drain. Different simulations are performed in nanoHUB as well as TCAD tool with different channel length to analyze the impact of different factors on electronic transport inside the nanowire FETs. Analysis are observed with the scaling the channel length of both the nanowire FETs. It is observed through simulation results that at low gate voltage, drain current and the sub-threshold swing increases.