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Abstract
The heterostructure devices have been continuously exploited for the electronic applications since the last decade.In this brief, the anomalous behavior of base current in Silicon-Germanium Heterojunction Biploar Transistor (SiGe-HBT) is analyzed using numerical simulations through TCAD. It has been revealed that after proton irradiation collector current of SiGe-HBT remains unchanged while base current is increased.