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Abstract
This report demonstrates that the influence of various semiconductors like wurtzite nitrides on the overall performance of a Cu-film based optical sensor. The theoretical simulation shows that the sensitivity enhances due to the introduction of various optimized semiconductors by a factor of 2.38, 2.22, 2.33, 1.73, and 2.28 for InN, AlN, GaN, Ge, and Si respectively. The electric field enhancement factor has been studied separately for each semiconductor and found highest factor for InN. The investigation shows that overall performance is attained maximum for the optimized thickness of InN (13nm), Cu(32nm) and graphene (0.34nm). This study recommends that introduction of InN would be a new roadmap for fabrication of highly sensitive and accurate SPR sensor.