Main Article Content
Abstract
Cu2BaSn(S, Se)4 (CBTSSe) is emerged as most promising absorber layer for the thin films solar cells due to its exotic properties such optimum band gap (~1.5 eV), high absorption coefficient (> 104 cm-1), less number of stable secondary phases, p-type conductivity etc. In the present article, device modelling of CBTSSe solar cell is carried out using one dimension solar cell capacitance simulator (1D-SCAPS) program. The JV characteristics of Mo/p-CBTSSe/n-CdS/ZnO/ITO (in substrate configuration) is analyzed by varying thickness and optical band gap of CBTSSe.The maximum efficiency of the optimized device is 10.5% with VOC of 658 mV.