Main Article Content
Abstract
With continuous scaling in MOSFETs, short channel parameters are putting a serious stumbling block on the miniaturization. In that regard, Tunnel FETs are seen as a promising device to provide a solution to this issue. TFETs work on the basis of band to band tunneling, and has the ability to provide high ION/IOFF ratio, and a steeper subthreshold slope. However, using a conventional silicon as a material deter the performance of TFETs because of larger energy band gap of a silicon as a result tunneling phenomenon is suppressed. In this paper, we present a solution in the form of Group III-V based semiconductors, which are direct band gap materials rather than a silicon, which is an indirect bandgap material. Moreover, it has been established by the results that a double gated TFETs perform better because of the greater controllability provided by the gate over the channel.The ON OFF currents of a device are 0.1μA/μm and 10 fA/μm, with ION/IOFF ratio of around 107. The subthreshold swing at lower drain voltages is around 54 mV/decade, which is better than the ideal value achievable in the MOSFETs.